In:
Applied Physics Letters, AIP Publishing, Vol. 96, No. 25 ( 2010-06-21)
Abstract:
We report the development of a GaN-based green light-emitting diode (LED) with a selective area photonic crystal (SPC) structure, which was formed outside the p-bonding electrode on p-GaN. As a result, the optical output power of LEDs with SPC was enhanced by 78% compared to that without PC. In addition, the forward voltage, series resistance, and leakage current of LEDs with SPC were remarkably improved. These results show that the light extraction efficiency of green LEDs can be greatly increased using the SPC structure, with no degradation of electrical properties.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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