In:
Journal of Applied Physics, AIP Publishing, Vol. 120, No. 2 ( 2016-07-14)
Abstract:
We have investigated the thickness-dependent transport properties of La1/3Sr2/3FeO3 thin films grown on SrTiO3 (001) and (111) substrates. At a thickness of ∼40 nm, both films show a clear transition in resistivity associated with the characteristic charge disproportionation at approximately 190 K. The transition temperature of the charge disproportionation is nearly unchanged with decreasing film thickness down to a certain thickness of ∼13 nm for both orientations, while the change in resistivity gradually decreases. Below this thickness, the transition becomes unclear, strongly suggesting the suppression of the charge disproportionation at the critical thickness of ∼13 nm. Furthermore, there is no significant difference in the thickness dependence of La1/3Sr2/3FeO3 thin films between the (001) and (111) orientations. The negligible crystallographic-orientation dependence may reflect the isotropic nature for the domain of charge disproportionation states in La1/3Sr2/3FeO3.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2016
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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