In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 28, No. 3 ( 2010-05-01), p. C3B17-C3B21
Abstract:
In this article, the authors report on growth of InGaN/AlInN multiquantum wells (MQWs) by rf-plasma-assisted molecular beam epitaxy on (0001) GaN substrates. Intersubband transitions in InGaN/AlInN MQWs with widths varying from 1.3 to 1.8 nm has been studied experimentally and analyzed theoretically within the electron effective mass approximation. The intersubband absorption between the first and the second electron levels was observed at the wavelength of ∼1.3–1.6 μm. The broadening of intersubband absorption for this system has been found to be much larger than for indium free system (i.e., GaN/AlN MQWs). In addition, it has been found that the broadening increases from ∼280 to ∼390 meV when the nominal quantum well (QW) width decreased from 1.8 to 1.3 nm. On the basis of theoretical calculations combined with the transmission electron microscopy analysis, it has been concluded that the observed broadening of intersubband absorption is due to the QW width fluctuations. It has been estimated that the maximal width fluctuations in these MQWs are equal to ∼2 monolayers. Such a significant QW width fluctuation appears in this system because of the incorporation of indium atoms.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2010
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
797726-8
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