In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 24, No. 5R ( 1985-05-01), p. 524-
Abstract:
In 1- x Ga x P 0.96 As 0.04 LPE layers were grown on (100) GaAs substrates from a two-phase solution with an excess GaP source at 785°C and 795°C. The relations between the liquid compositions of Ga and P, X Ga l and X P l , at 800°C, were obtained experimentally for a liquid composition of As, X As l , of 0.76 at%. Based on these results, it was found that high-quality InGaPAs LPE-layers can be grown from an In melt with X Ga l between 1.10 at% and 1.30 at% and X P l between 2.85 at% and 2.90 at%. The liquid and solid compositions are discussed in connection with the calculated In-Ga-P-As phase diagram. The characteristics of the solution were examined by changing the growth time and temperature, and the crystal quality of the InGaPAs LPE layers was examined by a photoluminescence method in terms of the lattice mismatch between the InGaPAs LPE layer and the GaAs substrate
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1985
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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