In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4R ( 2010-04-01), p. 044001-
Abstract:
We aim at embedding a quantum dot on a suspended nanowire by solving the problem of unintentional quantum dot formation, which exacerbates in a suspended nanowire. The origin of this worsening is the higher potential barrier presumably owing to the enhancement of random-dopant-induced potential fluctuation and/or higher degree of surface roughness and surface trapped charges on suspended nanowires. The higher barrier was successfully decreased by adopting a higher doping concentration as well as wider constriction patterns. Consequently, we can control the quantum dot formation in the suspended nanowire and successfully defined a single-quantum dot by patterning the double constrictions on the heavily doped suspended nanowire.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.044001
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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