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  • Kobayashi, Hiroyuki  (3)
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Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. 9A ( 1993-09-01), p. L1186-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 9A ( 1993-09-01), p. L1186-
    Abstract: Organic matter on a Si surface was investigated using thermal desorption spectroscopy (TDS). It was clarified that acetone, ethanol and toluene contaminants on a bare Si surface can be detected by the TDS system, ESCO EMD-WA1000K, and these organic contaminants have different desorption temperatures and fragment patterns. Therefore organic contaminants on Si wafers were thought to be separated by desorption temperature, and characterized from the fragment pattern at that desorption temperature. Here, the desorption temperature is thought to be proportional to the activation energy for desorption. Thus bonding strength between organic contaminants and the Si surface is qualitatively estimated from the desorption temperature.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.32.L1186
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. 8A ( 1993-08-01), p. L1031-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 8A ( 1993-08-01), p. L1031-
    Abstract: This letter reports the effect of organic matter on the growth of native oxide on a Si surface. Bare Si wafers and Si wafers with native oxide were stored under various conditions in a clean room and the thickness of native oxide was examined. In the case of the bare Si wafers, the native oxide hardly grew in a closed system but the native oxide grew to 6 Å in an open system when the storage time was 24 h. On the other hand, in the case of Si wafers with native oxide, this suggests that accumulation of organic matter occurs on Si wafers in the open system in the clean room. It was suggested that the accumulation of organic matter on Si wafers facilitates the growth of native oxide.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.32.L1031
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Study of Si Etch Rate in Various Composition of SC1 Solution
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. 1A ( 1993-01-01), p. L45-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1A ( 1993-01-01), p. L45-
    Abstract: Etching of Si wafer surface in an NH 4 OH:H 2 O 2 :H 2 O mixture (SC1 solution) is studied in regard to the effect of the composition of the solution. It is clarified that, when H 2 O 2 concentration is constant, the etch rate increases linearly with OH - ion concentration and reaches a saturation etch rate. This saturation etch rate is inversely proportional to H 2 O 2 concentration. Microroughness of Si surface after SC1 treatment is also investigated. It is also found that microroughness is independent of NH 4 OH concentration when the etch rate is kept constant.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.32.L45
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
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