GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Klaassen, J. J.  (5)
  • 1
    Online Resource
    Online Resource
    Uniformity and Performance Characterization of GaN P-I-N Photodetectors Fabricated From 3-Inch Epitaxy
    Springer Science and Business Media LLC ; 1998
    In:  MRS Proceedings Vol. 537 ( 1998)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 537 ( 1998)
    Abstract: Gallium nitride wafer epitaxy on large diameter substrates is critical for the future fabrication of large area UV linear or 2D imaging arrays, as well as for the economical production of other GaN-based devices. Typical group III-nitride deposition is now performed on 2-inch diameter or smaller sapphire substrates. Reported here are visible blind, UV GaN p-in photodetectors which have been fabricated on 3-inch diameter (0001) sapphire substrates by RF atomic nitrogen plasma MBE. The uniformity across the wafer of spectral responsivity and shunt resistance (R 0 ) for the p-i-n photodetectors has been characterized. Spectral responsivity and 1/ f noise as a function of temperature exceeding 250°C will be presented for the GaN p-i-n photodetectors. Spectral response with 〉 0.17 A/W at peak wavelength and having 4-6 orders of magnitude visible rejection has been achieved. 1/ f noise typically less than 10 -14 A/Hz 1/2 at room temperature also has been achieved with GaN p-i-n photodiodes. The results have been correlated with proposed models for dark current and 1/ f noise in GaN diodes.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-537-G7.6
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1998
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated from 3-Inch Epitaxy
    Springer Science and Business Media LLC ; 1999
    In:  MRS Internet Journal of Nitride Semiconductor Research Vol. 4, No. S1 ( 1999), p. 805-810
    Details
    In: MRS Internet Journal of Nitride Semiconductor Research, Springer Science and Business Media LLC, Vol. 4, No. S1 ( 1999), p. 805-810
    Abstract: Gallium nitride wafer epitaxy on large diameter substrates is critical for the future fabrication of large area UV linear or 2D imaging arrays, as well as for the economical production of other GaN-based devices. Typical group III-nitride deposition is now performed on 2-inch diameter or smaller sapphire substrates. Reported here are visible blind, UV GaN p-i-n photodetectors which have been fabricated on 3-inch diameter (0001) sapphire substrates by RF atomic nitrogen plasma MBE. The uniformity across the wafer of spectral responsivity and shunt resistance (R 0 ) for the p-i-n photodetectors has been characterized. Spectral responsivity and 1/ f noise as a function of temperature exceeding 250°C will be presented for the GaN p-i-n photodetectors. Spectral response with 〉 0.17 A/W at peak wavelength and having 4-6 orders of magnitude visible rejection has been achieved. 1/ f noise typically less than 10 −14 A/Hz 1/2 at room temperature also has been achieved with GaN p-i-n photodiodes. The results have been correlated with proposed models for dark current and 1/ f noise in GaN diodes.
    Type of Medium: Online Resource
    ISSN: 1092-5783
    URL: Article
    DOI: 10.1557/S1092578300003458
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1999
    detail.hit.zdb_id: 2021992-1
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 3
    Online Resource
    Online Resource
    High Temperature GaN and AlGaN Photovoltaic Detectors for UV Sensing Applications
    Springer Science and Business Media LLC ; 1997
    In:  MRS Proceedings Vol. 482 ( 1997)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 482 ( 1997)
    Abstract: AlGaN photodiode detectors are grown on (0001) sapphire by RF atomic nitrogen plasma molecular beam epitaxy. Both individual detectors and 1 × 10 element arrays are fabricated. The individual detectors have active areas of 0.5 mm 2 , 1.0 mm 2 , and 2.0 mm 2 . Individual elements in the l × 10 detector arrays range in size from 250×250 μm to 450×450 μm. The detectors are fabricated using a chlorine-based reactive ion etch (RIE) and refractory metal ohmic contacts. At room temperature, GaN p-i-n photovoltaic detectors show peak responsivity at 360 nm as high as 0.198 A/W, corresponding to an internal quantum efficiency of 85%. These detectors also exhibit five orders of magnitude of rejection for radiation longer than 500 nm. The electrical and spectral characteristics of these detectors are examined at elevated temperatures. The short wavelength UV responsivity remains fairly constant at elevated temperatures, while the peak responsivity actually increases with increasing temperature. The smooth surface morphology of heavily doped p-type material grown by MBE makes possible diode structures with a p-type bottom layer. The effect of the spectrally broader p-type material in the photodiode responsivity will be discussed.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-482-1065
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1997
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 4
    Online Resource
    Online Resource
    Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
    American Vacuum Society ; 1998
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 16, No. 3 ( 1998-05-01), p. 1286-1288
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 16, No. 3 ( 1998-05-01), p. 1286-1288
    Abstract: In this work, in situ cathodoluminescence (CL) is presented as a technique to optimize the molecular beam epitaxy (MBE) growth conditions for InGaN films and structures. InGaN was grown at 1 μm/h using a reactive nitrogen rf plasma source at substrate temperatures ranging from 550 to 650 °C. The quick determination of the emission wavelength and quality from the peak position and width allowed various growth conditions and structures to be tried without removal of the sample from the MBE system. CL scans are presented from samples grown under varying Ga/In flux ratios, III/nitrogen flux ratios, and substrate temperatures showing the usefulness of in situ monitoring for MBE InGaN growth.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.590001
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1998
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 5
    Online Resource
    Online Resource
    Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence
    Springer Science and Business Media LLC ; 1997
    In:  MRS Proceedings Vol. 468 ( 1997)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 468 ( 1997)
    Abstract: In-situ cathodoluminescence (CL) is presented as a technique to optimize GaN, and AlGaN films deposited by MBE using an RF plasma as a source of reactive nitrogen. Excitation of the MBE grown nitride films is conveniently achieved in the preparation chamber using an Auger electron gun. The photoemission is monitored through a side port and dispersed with a 1/8 m monochromator with a typical resolution of 3 nm. The in-situ CL spectra of AlGaN and GaN films provides quick determination of both material composition, doping, and quality from the position and width of the band edge emission. The use of CL for the assessment of material composition in the growth of nitride materials is extremely beneficial since the complementary technique of RHEED oscillations is not routinely observed for these systems. The determination of material quality using CL has been used to optimize growth conditions for GaN PIN junction photovoltaic detectors on (0001) sapphire. Detectors having peak responsivity of 0.175 AAV at the GaN band edge of 365 nm and a UV to visible rejection ratio of greater than 10 5 have been fabricated. The high rejection ratio is accredited to the reduction of the yellow defect levels in the MBE grown material. Material optimization using in-situ CL for growth of AlGaN MODFETs having drain currents of 425 ma/mm and gm of 66 mS/mm is discussed.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-468-51
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1997
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...