In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 655 ( 2000)
Abstract:
PZT thin films with a thickness of 70 nm were successfully fabricated using a modified solution combined with PbTiO 3 seed layer. Throughout various approaches, we found that the microstructure of PZT thin film plays an important role in determining the electrical properties such as hysteretic properties and leakage currents, particularly when the thickness is below 100 nm. We modified the precursor system to improve the microstructure in PZT thin film. In addition, we also adopted a thin PbTiO 3 seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those obtained from 240 nm thick PZT film. The hysteretic properties is excellent enough to operate at a low voltage (2V) for a high density FRAM application.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-655-CC1.7.1
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2000
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