In:
Semiconductor Science and Technology, IOP Publishing, Vol. 37, No. 4 ( 2022-04-01), p. 045016-
Abstract:
Although hexagonal (2H) silicon (Si) semiconductors exhibit excellent optical properties owing to their quasi-direct bandgap, their growth conditions, which require extremely high pressures, preclude their widespread use in industrial applications. The current study, therefore, proposes a novel approach for the facile growth of hexagonal Si at atmospheric pressure via a unique phenomenon known as Al-based nano absorber. A mixed-source hydride vapor phase epitaxy (HVPE) method was used for the growth of the hexagonal Si single crystals employing a rapid interaction between GaCl 3 , AlCl, and SiCl n gases at a high temperature of 1200 °C using a source mixture of Ga, Al, and Si. In this process, the Al-based nano absorber was formed, which resulted in the absorbance of Si atoms, rather than the growth of Al-based nano absorber, to form the Si crystals due to the subsequent lack of GaCl 3 and AlCl sources. The hexagonal Si structure of these Si crystals was confirmed using field emission scanning electron microscopy, high-resolution x-ray diffraction spectroscopy, and Raman spectroscopy. Thus, the current study establishes atmospheric pressure mixed-source HVPE as a facile approach for growing various allotropic crystals such as Si, C, or Ge via absorption of other atoms by an Al-based nano absorber.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/ac579c
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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