In:
Journal of Applied Physics, AIP Publishing, Vol. 85, No. 9 ( 1999-05-01), p. 6898-6903
Abstract:
In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Å) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1999
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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