In:
ECS Transactions, The Electrochemical Society, Vol. 33, No. 3 ( 2010-10-01), p. 521-526
Abstract:
The effect of nitrogen incorporation on the dielectric properties and bias temperature instability characteristics of HfOxNy and ZrOxNy were investigated. The incorporated nitrogen induces a reduction in the capacitance equivalent oxide thickness value, increases the leakage current, and causes the turn around of Vth shift under the positive bias stress in nMOSFET. In addition, compared to HfOxNy, ZrOxNy shows a significantly lower initial Vth shift under positive gate stress due to the lower number of shallow bulk traps related to oxygen vacancies.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
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