In:
Applied Physics Letters, AIP Publishing, Vol. 93, No. 5 ( 2008-08-04)
Abstract:
Metal nanocrystals synthesized with a micellar template were applied for three-dimensional vertical floating gate memory devices. Using a highly ordered micellar template formed with a diblock copolymer, we produced cobalt (Co) nanocrystals with a uniform size and spatial distribution on a planar surface and a sidewall surface. The hydrogen annealing effects were investigated in terms of memory performance. The fabricated vertical floating gate memory with Co nanocrystals annealed with hydrogen showed a memory window with a voltage greater than 1 V and a retention time characteristic that preserves more than 60% of the initial charge after ten years.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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