In:
Chinese Physics B, IOP Publishing, Vol. 30, No. 3 ( 2021-03-01), p. 037303-
Abstract:
A near-infrared germanium (Ge) Schottky photodetector (PD) with an ultrathin silicon (Si) barrier enhancement layer between the indium-doped tin oxide (ITO) electrode and Ge epilayer on Si or silicon-on-insulator (SOI) is proposed and fabricated. The well-behaved ITO/Si cap/Ge Schottky junctions without intentional doping process for the Ge epilayer are formed on the Si and SOI substrates. The Si- and SOI-based ITO/Si cap/Ge Schottky PDs exhibit low dark current densities of 33 mA/cm 2 and 44 mA/cm 2 , respectively. Benefited from the high transmissivity of ITO electrode and the reflectivity of SOI substrate, an optical responsivity of 0.19 A/W at 1550 nm wavelength is obtained for the SOI-based ITO/Si cap/Ge Schottky PD. These complementary metal–oxide–semiconductor (CMOS) compatible Si (or SOI)-based ITO/Si cap/Ge Schottky PDs are quite useful for detecting near-infrared wavelengths with high efficiency.
Type of Medium:
Online Resource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/abd46b
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
2412147-2
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