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  • Kawasaki, M.  (3)
  • Yasuda, T.  (3)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 78, No. 9 ( 2001-02-26), p. 1237-1239
    In: Applied Physics Letters, AIP Publishing, Vol. 78, No. 9 ( 2001-02-26), p. 1237-1239
    Abstract: We describe the structural and optical properties of II–VI oxide alloys, MgxZn1−xO and CdyZn1−yO, grown by pulsed-laser deposition. Single-phase alloyed films of (Mg,Zn)O and (Cd,Zn)O with c-axis orientations were epitaxially grown on sapphire (0001) substrates. The maximum magnesium and cadmium concentrations (x=0.33 and y=0.07, respectively) were significantly larger than the thermodynamic solubility limits. The band gap energies systematically changed from 3.0 (y=0.07) to 4.0 eV (x=0.33) at room temperature. The photoluminescence peak energy deduced at 4.2 K could be tuned from 3.19 to 3.87 eV by using Cd0.07Zn0.93O and Mg0.33Zn0.67O at both ends, respectively. The lattice constants of the a axis were monotonically increasing functions of the concentrations of both alloys. The exciton–phonon coupling strength was determined in Cd0.01Zn0.99O grown on a lattice-matched ScAlMgO4 substrate.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 1998
    In:  Applied Physics Letters Vol. 72, No. 19 ( 1998-05-11), p. 2466-2468
    In: Applied Physics Letters, AIP Publishing, Vol. 72, No. 19 ( 1998-05-11), p. 2466-2468
    Abstract: We propose a widegap II–VI semiconductor alloy, MgxZn1−xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1−xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x⩾0.36. Lattice constants of MgxZn1−xO films changed slightly (∼1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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  • 3
    Online Resource
    Online Resource
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 9 ( 2001-08-27), p. 1282-1284
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 9 ( 2001-08-27), p. 1282-1284
    Abstract: Magnitudes of strain in ZnO epitaxial layers grown on sapphire(0001) substrates under various growth conditions were experimentally determined by x-ray diffraction. We discuss the strain-induced energy shift on the exciton resonances, the results of which were analyzed theoretically using the Hamiltonian for the valence bands under in-plain biaxial strain. Comparative studies with GaN evidenced the advantages of ZnO in terms of sensitivity of the strain-induced energy shift and of piezoelectric effect in heterostructures.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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