In:
ECS Transactions, The Electrochemical Society, Vol. 16, No. 21 ( 2009-03-20), p. 11-15
Abstract:
Interfacial dipole presented at the interface of dielectric/silicon has been measured with x-ray photoelectron spectroscopy. With a use of high energy x-ray source, the band bending profile of a silicon substrate and the surface potential can be determined. By comparing the potential profile for p+ and n+-Si wafer, a voltage shift can be calculated. Using this method, a large negative potential shift of 0.5 V at La-silicate/silicon interface has been observed. The obtained value of interfacial dipole is consistent with the value obtained from gate leakage current analysis.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2009
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