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  • Kato, Isamu  (3)
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Publisher
Person/Organisation
Language
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Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Microwave Plasma CVD System for the Fabrication of Thin Solid Films
    IOP Publishing ; 1982
    In:  Japanese Journal of Applied Physics Vol. 21, No. 8A ( 1982-08-01), p. L470-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 21, No. 8A ( 1982-08-01), p. L470-
    Abstract: This study was concerned with the development of a process for the deposition of thin-films from a microwave plasma of semiconductor materials. A coaxial line type microwave CW discharge was used to create uniform plasmas and a-Si films were fabricated from Ar gas containing 10% SiH 4 . The X-ray diffraction patterns shown that the fabricated films, where the microwave power is large, are crystallized and the structure of the other films is amorphous.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.21.L470
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1982
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Microwave Plasma CVD System to Fabricate α-Si Thin Films out of Plasma
    IOP Publishing ; 1983
    In:  Japanese Journal of Applied Physics Vol. 22, No. 1A ( 1983-01-01), p. L40-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. 1A ( 1983-01-01), p. L40-
    Abstract: This study has been concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 Å/min. The structure of the fabricated films is amorphous and the optical band gap is 1.8 to 2.0 eV.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.22.L40
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Analysis of radial distribution of plasma parameters in a coaxial-line microwave discharge tube
    AIP Publishing ; 1983
    In:  Journal of Applied Physics Vol. 54, No. 9 ( 1983-09-01), p. 4883-4888
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 54, No. 9 ( 1983-09-01), p. 4883-4888
    Abstract: The discharge mechanism in a coaxial-line microwave discharge tube that makes uniform plasma along the circumference of the tube has been analyzed. The analysis includes the skin effect of microwave penetration into the plasma and the equilibrium between generation and losses of the charged particles. It is shown that the radial distributions of electron density and electron temperature can calculated from measured values of the radial distribution of light intensity. The electron density is about 1012 cm−3 near the center axis of the plasma column and is close to trapezoidal in shape. The electron temperature is about 4×104 K near the tube wall and decreases monotonically toward the center of the plasma column.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.332798
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
    Location Call Number Limitation Availability
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    Online Resource
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