In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 59, No. 12 ( 2020-12-01), p. 125502-
Abstract:
The reduction in the density of SiO 2 /Si interface state ( D it ) in the isolation region and transfer transistor gate oxide is necessary to improve the performance of complementary metal-oxide semiconductor (CMOS) image sensors. In this study, we demonstrated that a hydrocarbon-molecular-ion-implanted epitaxial silicon wafer can reduce the D it and Pb 0 center density in SiO 2 /Si interface regions analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. The D it and Pb 0 center density of wafers without hydrocarbon molecular ions increased after annealing at 700 °C. On the other hand, the D it and Pb 0 center density of wafers implanted with hydrocarbon molecular ions decreased after annealing at 700 °C. We also estimated the activation energy to be 1.67 eV for the hydrogen termination reactions with hydrogen molecules and Si dangling bonds at the SiO 2 /Si interface. The termination effects of the hydrocarbon-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/abc3d8
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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