In:
Applied Physics Letters, AIP Publishing, Vol. 98, No. 23 ( 2011-06-06)
Abstract:
We present a letter on single-wire photodetectors based on radial n-i-n multiquantum well (QW) junctions. The devices are realized from GaN wires grown by catalyst-free metalorganic vapor phase epitaxy coated at their top by five nonpolar In0.16Ga0.84N/GaN undoped radial QWs, and are sensitive to light with energy E & gt;2.6 eV. Their photoconductive gain is as high as 2×103. The scanning photocurrent microscopy maps evidence that the detector response is localized at the extremity containing the QWs for both below (at λ=488 nm) and above GaN band gap (at λ=244 nm) excitation. This confirms that the device operates as a radial n-i-n junction.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2011
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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