In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 5S2 ( 2011-05-01), p. 05FB02-
Abstract:
We investigated the growth and magnetic properties of ternary ZnSnAs 2 thin films doped with a various degrees of Mn content. It was confirmed that Mn-doped ZnSnAs 2 thin films are pseudomorphically grown on nearly lattice-matched InP(001) substrates. Magnetization measurements on Mn-doped ZnSnAs 2 thin films revealed a ferromagnetic transition temperature of around 330 K, and clearly showed hysteresis loops even at room temperature. No evidence of magnetic secondary-phase MnAs formation in the host ZnSnAs 2 thin films was observed within the limit of our measurement system. We also prepared a trilayer structure consisting of Mn-doped ZnSnAs 2 layers and an undoped ZnSnAs 2 intermediary layer as a preliminary structure for a tunneling magnetic junction. This structure was confirmed to demonstrate ferromagnetism at room temperature. The present results suggest that diluted ferromagnetic (Zn,Mn,Sn)As 2 thin films are one of the most promising building blocks for InP-based spintronic devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.05FB02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink