In:
physica status solidi c, Wiley, Vol. 6, No. 5 ( 2009-05), p. 1158-1161
Abstract:
The previously reported transport properties data of the undoped ZnSnAs 2 grown on semi‐insulating InP substrates by molecular beam epitaxy (MBE) have been reviewed and analysed. We have found out that the temperature dependence of Hall coefficient and resistivity can be well explained by the impurity band model proposed by Isomura and Tomioka. By using the said model, we were able to resolve the experimentally obtained carrier concentration p exp and mobility μ exp into valence band carrier concentration p v with mobility μ v and acceptor band carrier concentration p a with mobility μ a . The computed apparent values p app and μ app are in good agreement with p exp and μ exp , respectively. To support the validity of the model, we also have confirmed the presence at low temperatures of negative magnetoresistance expected if impurity band conduction is predominant. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200881189
Language:
English
Publisher:
Wiley
Publication Date:
2009
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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