In:
Applied Physics Letters, AIP Publishing, Vol. 103, No. 22 ( 2013-11-25)
Kurzfassung:
Current saturation in graphene field-effect transistor (GFET) is of significant importance to improve the maximum oscillation frequency (fmax). We investigated the direct current (dc) and radio frequency (rf) characteristics of a heavily p-type doped GFET based on chemical vapor deposition grown material. The drain current saturation is found in our device. It cannot be explained by the “pinch-off” effect associated with ambipolar transport, but can be attributed to nonlinear channel conductance and velocity saturation in unipolar channel. This study promotes understanding the behaviors of heavily doped GFETs and their radio frequency applications.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2013
ZDB Id:
211245-0
ZDB Id:
1469436-0
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