In:
Journal of Applied Physics, AIP Publishing, Vol. 125, No. 11 ( 2019-03-21)
Abstract:
We investigate the third-order optical nonlinearity in silicon nitride (SiN) films prepared using magnetron sputtering. The large nonlinear refractive index n2 in SiN prepared at room temperature of a value of −2.00 × 10−16 m2/W and the nonlinear absorption coefficient β of 1.44 × 10−9 m/W are determined by the Z-scan method at a wavelength of 1064 nm and a pulse duration of 25 ps. The n2 is three orders of magnitude larger than that in SiN films prepared by the chemical vapor deposition method and at a wavelength of 1.55 μm. The enhanced n2 up to −6.27 × 10−16 m2/W and the slightly changed β, indicating an enhanced ratio of |Reχ(3)|/|Imχ(3)|, are further obtained in the annealed samples. Such a change is probably due to the crystallization of the films. The optical bistability in SiN resonant waveguide grating (RWG) is numerically studied. The low threshold intensity around 300 MW/cm2 in the RWG is obtained.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2019
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink