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  • MDPI AG  (4)
  • Jiang, Feng  (4)
  • Wen, Qiuling  (4)
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  • MDPI AG  (4)
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  • 1
    In: Micromachines, MDPI AG, Vol. 12, No. 6 ( 2021-05-26), p. 611-
    Abstract: The nanohole arrays on the silicon substrate can effectively enhance the light absorption in thin film silicon solar cells. In order to optimize the solar energy absorption, polystyrene microspheres with diameters of 1 μm are used to assist picosecond laser with a wavelength of 1064 nm to fabricate nanohole arrays on silicon substrate. The experimental results show that the morphology and size of the silicon nanoholes strongly depend on the laser fluence. At 1.19–1.59 J/cm2 laser fluences, well-ordered arrays of nanoholes were fabricated on silicon substrate, with diameters domain from 250 to 549 nm and depths ranging from 60 to 99 nm. However, large amounts of sputtered nanoparticles appeared around the silicon nanoholes. To improve the surface morphology of silicon nanoholes, a nanolayered gold coating is applied on silicon surface to assist laser processing. The results show that, for gold-coated silicon substrate, sputtered nanoparticles around the nanoholes are almost invisible and the cross-sectional profiles of the nanoholes are smoother. Moreover, the ablation rate of the nanoholes on the gold-coated silicon substrate have increased compared to that of the nanoholes on the uncoated one. This simple method allows fast fabrication of well-ordered nanoholes on silicon substrate without sputtered nanoparticles and with smooth inner surface.
    Type of Medium: Online Resource
    ISSN: 2072-666X
    Language: English
    Publisher: MDPI AG
    Publication Date: 2021
    detail.hit.zdb_id: 2620864-7
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  • 2
    Online Resource
    Online Resource
    MDPI AG ; 2020
    In:  Materials Vol. 13, No. 12 ( 2020-06-26), p. 2871-
    In: Materials, MDPI AG, Vol. 13, No. 12 ( 2020-06-26), p. 2871-
    Abstract: Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching.
    Type of Medium: Online Resource
    ISSN: 1996-1944
    Language: English
    Publisher: MDPI AG
    Publication Date: 2020
    detail.hit.zdb_id: 2487261-1
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  • 3
    In: Crystals, MDPI AG, Vol. 11, No. 8 ( 2021-08-11), p. 930-
    Abstract: In order to study the anisotropy of fracture toughness and fracture mechanism of single-crystal sapphire, the three-point bending tests and the single-edge V-notch beam (SEVNB) were used to test the fracture toughness of A-plane, C-plane, and M-plane sapphire, which are widely used in the semiconductor, aerospace, and other high-tech fields. Fracture morphology was investigated by a scanning electron microscope and three-dimensional video microscopy. The fracture toughness and fracture morphology of different crystal planes of sapphire showed obvious anisotropy and were related to the loading surfaces. C-plane sapphire showed the maximal fracture toughness of 4.24 MPa·m1/2, and fracture toughness decreases in the order of C-plane, M-plane, and A-plane. The surface roughness is related to the dissipation of fracture energy. The surface roughness of the fracture surface is in the same order as C-plane 〉 M-plane 〉 A-plane. The fracture behavior and morphology of experiments were consistent with the theoretical analysis. C-plane sapphire cleavages along the R-plane with an angle of 57.6 degrees and the rhombohedral twin were activated. M-plane and A-plane sapphire cleavages along their cross-section.
    Type of Medium: Online Resource
    ISSN: 2073-4352
    Language: English
    Publisher: MDPI AG
    Publication Date: 2021
    detail.hit.zdb_id: 2661516-2
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  • 4
    In: Micromachines, MDPI AG, Vol. 8, No. 10 ( 2017-10-07), p. 300-
    Abstract: Laser-induced-plasma-assisted ablation (LIPAA) is a promising micro-machining method that can fabricate microstructure on hard and transparent double-polished single crystal sapphire (SCS). While ablating, a nanosecond pulse 1064 nm wavelength laser beam travels through the SCS substrate and bombards the copper target lined up behind the substrate, which excites the ablating plasma. When laser fluence rises and is above the machining threshold of copper but below that of SCS, the kinetic energy of the copper plasma generated from the bombardment is mainly determined by the laser fluence, the repetition rate, and the substrate-to-target distance. With a lower repetition rate, SCS becomes metallized and gains conductivity. When micro-machining SCS with a pulsed laser are controlled by properly controlling laser machining parameters, such as laser fluence, repetition rate, and substrate-to-target distance, LIPAA can ablate certain line widths and depths of the microstructure as well as the resistance of SCS. On the contrary, conductivity resistance of metalized sapphire depends on laser parameters and distance in addition to lower repetition rate.
    Type of Medium: Online Resource
    ISSN: 2072-666X
    Language: English
    Publisher: MDPI AG
    Publication Date: 2017
    detail.hit.zdb_id: 2620864-7
    Location Call Number Limitation Availability
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