In:
ECS Transactions, The Electrochemical Society, Vol. 33, No. 6 ( 2010-10-01), p. 211-219
Abstract:
We have investigated the characterization of Si0.8Ge0.2/Si multi-layer grown directly onto Si (001) substrates using reduced pressure chemical vapor deposition (RPCVD). The structural properties of the Si0.8Ge0.2/Si multi-layer were investigated using X-ray diffraction (XRD) and TEM. Three peaks are observed in Raman spectrum, which are located at about 514,404, and 303 cm-1, corresponding to the vibration of Si-Si, Si-Ge, and Ge-Ge phonons, respectively. The PL spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si multi-layer. For Si0.8Ge0.2/Si multi-layer, the transition peaks related to the QW region observed in the photocurrent spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) fundamental excitonic transitions.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
detail.hit.zdb_id:
2217591-X
detail.hit.zdb_id:
2251888-5
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