In:
SID Symposium Digest of Technical Papers, Wiley, Vol. 41, No. 1 ( 2010-05), p. 1037-1040
Abstract:
Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active‐matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch‐stop layer (ESL) delivered excellent electrical performance with field‐ effect mobility of 21 cm 2 /V‐s, an on/off ratio of 〉 10 8 , and subthreshold slope (SS) of 0.29V/dec. A full color 19‐inch AMOLED display has been developed using the amorphous IGZO TFT backplane.
Type of Medium:
Online Resource
ISSN:
0097-966X
,
2168-0159
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
2526337-7
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