In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 1S1 ( 2011-01-01), p. 01AD06-
Abstract:
We report the characterization of the InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) grown on a patterned sapphire substrate by metal organic chemical vapor deposition (MOCVD) using the selective area growth (SAG) method. The SAG patterns were designed to be circular and their diameters were 700 and 200 µm. After the growth, the InGaN/GaN MQW LED of 200 µm diameter had various crystal facets and a shape similar to volcanic craters, which were not observed in the 700-µm-diameter sample. We obtained an active layer with compositional nonuniformity and superior optical properties. We found wide electroluminescence (EL) spectral peaks near 470, 570, and 600 nm. The distribution of the EL spectrum of the sample was similar to that of a conventional phosphor-converted white LED.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.01AD06
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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