In:
Journal of Applied Physics, AIP Publishing, Vol. 82, No. 11 ( 1997-12-01), p. 5865-5867
Abstract:
Amorphous silicon (a-Si) was crystallized by metal-induced crystallization (MIC) using a Ni standard absorption solution. The a-Si films spin-coated with a 5000 ppm Ni solution were crystallized at as low as 500 °C. Needlelike morphology, developed as a result of the migration of NiSi2 precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to 〈111〉. The a-Si can be fully crystallized at 500 °C for 20 h.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1997
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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