In:
Journal of Applied Physics, AIP Publishing, Vol. 71, No. 1 ( 1992-01-01), p. 432-435
Abstract:
Using a Raman microprobe, the charge carrier concentration across growth striations in Bridgman n-GaAs is determined both by the analysis of coupled LO-phonon-plasmon modes and their relative intensities compared to that of the uncoupled LO phonon of the depletion layer. It is shown that the charge carrier concentration typically varies by ±10% in the regions both under rough and facetting growth conditions. In the facetting grown region the charge carrier concentration appears to be higher by about 50%.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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