In:
Applied Physics Letters, AIP Publishing, Vol. 71, No. 12 ( 1997-09-22), p. 1733-1735
Abstract:
We use an atomic force microscope operating in a dynamic modus, commonly called tapping mode, to completely oxidise through thin 5 nm titanium films using the very local electric field between the tip and the sample. Tapping mode local oxidation minimizes tip degradation and therefore enhances resolution and reliability. By working under a controllable environment and measuring the resistance in situ while oxidising we are able to fabricate well-defined isolating Ti–TiOx–Ti barriers as small as 15 nm. Their conductance shows an exponential dependence on the oxide width, thereby identifying tunneling as the dominant conduction mechanism. From the nonlinear current-voltage characteristic a tunneling barrier height of 178 meV is derived.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1997
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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