In:
physica status solidi (RRL) – Rapid Research Letters, Wiley, Vol. 14, No. 8 ( 2020-08)
Abstract:
Herein, electronic bipolar resistive switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti device is investigated. The Pt/Si 3 N 3.0 /Ti device demonstrates bipolar resistive switching with set (reset) at negative (positive) bias, and the mechanism is revealed to be that the conduction filament, formed by percolation of the traps in defective silicon nitride thin film, is involved in the resistive switching. However, instead of the conduction filament, trapping and detrapping of the electrons in the trap sites of Si 3 N 3.0 become the dominant switching mechanism by introducing an Al 2 O 3 barrier layer between Pt and Si 3 N 3.0 , and the device has forming‐free, self‐rectifying, and nonlinear characteristics, which are necessary to the cross‐bar array (CBA) configuration. The optimized thickness of the Al 2 O 3 barrier layer is 4 nm. A detailed electrical analysis is performed to identify the switching mechanism of the device. Also, the read/write margin is calculated using H simulation program with integrated circuit emphasis (HSPICE) to estimate the available CBA cell size.
Type of Medium:
Online Resource
ISSN:
1862-6254
,
1862-6270
DOI:
10.1002/pssr.202000209
Language:
English
Publisher:
Wiley
Publication Date:
2020
detail.hit.zdb_id:
2259465-6
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