In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 10R ( 2011-10-01), p. 105501-
Abstract:
In this work, the influence of the V/III ratios of the low temperature (LT) AlN interlayer on GaN grown on Si 〈 111 〉 substrate have been investigated. It was found that V/III ratio of LT-AlN interlayer is another important growth parameter, which the crystalline quality of GaN was strongly dependent on. By optimizing the V/III ratio of LT-AlN, the high quality crack-free GaN epilayer with lower dislocation density on Si substrate have been obtained. We attribute it to the different LT-AlN surface morphology originated from optimizing the V/III ratio. Different V/III ratios could result in different GaN growth rates in vertical and lateral direction, which could effectively prevent the threading dislocation from penetrating through the LT-AlN interlayer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.105501
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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