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  • EDP Sciences  (7)
  • Huang, Q.  (7)
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  • EDP Sciences  (7)
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  • 1
    Online Resource
    Online Resource
    Inductance extraction of Press-Pack IGBT by Considering Displacement Current
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 04004-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 04004-
    Abstract: Taking the displacement current generated by charges accumulation into consideration, this paper presents a inductance extraction method for press-pack IGBT where conductor might not form a closed loop in simulation. Charge accumulating on ends of conductor is considered and then Ampere’s circuital law (ACL) could be meet. Vector potential A also could be affected by displacement current, which leads to a different formulation of partial inductance. A simplified model based on practical structure are used in numerical experiment for comparison between existing method and proposed method.
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186404004
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Electric Field Analysis of Press-Pack IGBTs
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 04006-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 04006-
    Abstract: High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT. The press-pack IGBTs have such advantages as low inductance, low thermal impedance and short circuit failure mode than the wire-bonded IGBT module, which especially suit for high voltage power transmission application by series connection. However, the electrical insulation failure modes of press-pack IGBTs are much less known with limited literature published. In this paper, we presented the electric field analysis of a 3D press-pack IGBT model under DC rating voltage test condition. The electric field distribution of the press-pack IGBT stack was solved as an electrostatic problem by employing the finite element method. The results revealed the potential electrical insulation failure modes of the press-pack IGBTs: corona discharge at the edge of silver plate, partial discharge at the micro gap between die and PEEK frame and creeping discharge at the surface of PEEK frame.
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186404006
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Analysis on the Influence of the Height of Tower on Passive Interference in shortwave
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 05005-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 05005-
    Abstract: The passive interference of transmission lines to nearby radio stations may affect the effective reception and transmission of radio station signals. Therefore, the accurate calculation of the electromagnetic scattering of transmission lines under the condition of external electromagnetic waves is the basis for determining the reasonable avoidance spacing of the two. For passive stations operating in short-wave frequencies, passive interference is mainly generated by the tower. This paper uses the method of moments to perform passive interference calculations under normal circumstances, And elaborates the method for calculating the electromagnetic field of the transmission line, obtains the space electric field intensity of the transmission line at the same working frequency and space location of the plane wave. Uses the approximate formula to inductive the formula for calculating height of tower and the protective distance.
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186405005
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Influence of Transmission Line Pitch on Passive Interference
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 05006-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 05006-
    Abstract: Passive interference of transmission lines to neighbouring radio stations may affect the effective reception and transmission of radio station signals. Therefore, it is the basis to accurately calculate the electromagnetic scattering of transmission lines including overhead wires and towers under the circumstance of electromagnetic waves from outside. Wherein for radio stations, the overhead conductor is the main factor that affects the radar detection because of the working mode of the radar and other factors. In this paper, in the general case of the application of moment method to carry out passive interference calculations, the overhead lines are assumed to be all the actual wire. The space electric field strength and RCS of the different pitch at different operating frequencies and spaces are obtained. The influence of pitch on passive interference of overhead conductors was analyzed. Thus providing a basis for modeling to save energy and reduce the effects of passive interference provides the modeling basis.
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186405006
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Analysis on the Influence of Transmission Lines span on Passive Interference in Shortwave
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 05004-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 05004-
    Abstract: The passive interference of transmission lines to nearby radio stations may affect the effective reception and transmission of radio station signals. Therefore, the accurate calculation of the electromagnetic scattering of transmission lines under the condition of external electromagnetic waves is the basis for determining the reasonable avoidance spacing of the two. For passive stations operating in short-wave frequencies, passive interference is mainly generated by the tower, and span is one of the most significant factors affecting passive interference. This paper uses the method of moments to carry out the passive interference calculations under normal circumstances, expounds the method of calculating the electromagnetic field of transmission line at the same time. And elaborates the method for calculating the electromagnetic field of the transmission line, obtains the space electric field intensity of the transmission line at the same working frequency and space location of the plane wave. Applying the approximate formula to calculate the formula for the span and critical distance between the observation point and the transmission line.
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186405004
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
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    Online Resource
  • 6
    Online Resource
    Online Resource
    Influence of Parasitic Inductances on Switching Performance of SiC MOSFET
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 04005-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 04005-
    Abstract: Compared to the silicon power devices, silicon carbide device has shorter switch time. Hence, as a result of the faster transition of voltage (dv/dt) and current (di/dt) in SiC MOSFET, the influence of parasitic parameters on SiC MOSFET’s switching transient is more serious. This paper gives an experimental study of the influence of parasitic inductance on SiC MOSFET’s switching characteristics. Most significance parameters are the parasitic inductances of gate driver loop and power switching loop. These include the SiC MOSFET package’s parasitic inductance, interconnect inductance and the parasitic inductance of dc link PCB trace. This paper therefore focuses on analysis and comparison of different parasitic parameters under various operation conditions in terms of their effect on overvoltage, overcurrent and switching power loss.
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186404005
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
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    Online Resource
  • 7
    Online Resource
    Online Resource
    A Novel Submodule Applied in HVDC Hybrid DC Breaker Topology
    EDP Sciences ; 2018
    In:  E3S Web of Conferences Vol. 64 ( 2018), p. 04003-
    Details
    In: E3S Web of Conferences, EDP Sciences, Vol. 64 ( 2018), p. 04003-
    Abstract: In recent years, with the vigorous development of power electronic technology, renewable energy sources such as wind power and solar energy utilization efficiency continuing to improve, and the application scale expanding unceasingly, DC power grid technology and the development of multiterminal HVDC has become a key link of transmission technology in our country. As the key equipment of biulding DC system, The direct current breaker need to be optimized on the aspect of topology, to promote the development of dc transmission. This article puts forward a new type of submodule which can be applicated in hybrid DC breaker. After a brief review of DC circuit breaker research status, the paper will give the topology structure, and analyzes its working principle. Then, verification and electrical stress calculation will be done in Saber Sketch simulation. Based on this, two other present scheme will be introduced, and finally a comparison will be made between the diffent scheme. As is concluded, the novel submodule can save the power elctronic device cost effectively
    Type of Medium: Online Resource
    ISSN: 2267-1242
    URL: Article
    DOI: 10.1051/e3sconf/20186404003
    Language: English
    Publisher: EDP Sciences
    Publication Date: 2018
    detail.hit.zdb_id: 2755680-3
    Location Call Number Limitation Availability
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    Online Resource
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