In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 9R ( 2011-09-01), p. 096503-
Kurzfassung:
The rapid growth of high-frequency wireless communication demands high-performance packaging structures at low cost. A flip-chip interconnect is one of the most promising technologies owing to its low parasitic effect and high performance at high frequencies. In this study, the in-house fabricated In 0.6 Ga 0.4 As metamorphic high electron mobility transistor (mHEMT) device was flip-chip-assembled using a commercially available low-cost organic substrate. The packaged device with the optimal flip-chip structure exhibited almost similar DC and RF results to the bare die. An exopy-based underfill was applied to the improvement of reliability with almost no degradation of the electrical characteristics. Measurement results revealed that the proposed packaging structure maintained a low minimum noise figure of 3 dB with 6 dB associated gain at 62 GHz. Such a superior performance after flip-chip packaging demonstrates the feasibility of the proposed low-cost organic substrate for commercial high-frequency applications up to the W-band.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.096503
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2011
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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