In:
Applied Physics Letters, AIP Publishing, Vol. 94, No. 13 ( 2009-03-30)
Abstract:
A fabrication process of coplanar homojunction thin-film transistors (TFTs) is proposed for amorphous In–Ga–Zn–O (a-IGZO), which employs highly doped contact regions naturally formed by deposition of upper protection layers made of hydrogenated silicon nitride (SiNX:H). The direct deposition of SiNX:H reduced the resistivity of the semiconductive a-IGZO layer down to 6.2×10−3 Ω cm and formed a nearly ideal Ohmic contact with a low parasitic source-to-drain resistance of 34 Ω cm. Simple evaluation of field-effect mobilities (μsat) overestimated their values especially for short-channel TFTs, while the channel resistance method proved that μsat was almost constant at 9.5 cm2 V−1 s−1.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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