In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 10S ( 2012-10-01), p. 10ND13-
Abstract:
Numerical simulation of optical absorption characteristics of gallium arsenide (GaAs) thin-film solar cells by the three-dimensional finite element method is presented, with emphasis on optimizing geometric parameters for nanowire and nanocone structures to maximize the ultimate photocurrent under AM1.5G illumination. The nanostructure-based GaAs thin-film solar cells have demonstrated a much higher photocurrent than the planar thin films owing to their much suppressed reflection and high light trapping capability. The nanowire structure achieves its highest ultimate photocurrent of 29.43 mA/cm 2 with a periodicity ( P ) of 300 nm and a wire diameter of 180 nm. In contrast, the nanocone array structure offers the best performance with an ultimate photocurrent of 32.14 mA/cm 2 . The results obtained in this work provide useful guidelines for the design of high-efficiency nanostructure-based GaAs solar cells.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.10ND13
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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