In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 7B ( 2004-07-01), p. L993-
Abstract:
We report the first observation of single-photon emission from a single InAs/InP quantum dot at a telecommunication wavelength. The single quantum dot was developed through a `double-cap' growth method using metalorganic chemical vapor deposition, and its emission covers a wide spectral range of the optical telecommunication band. Using a pulsed excitation source and gated single-photon detection modules, we observed a photon antibunching behavior through a single-mode optical fiber for an isolated exciton emission line at 1277.1 nm in the O-band (1.3 µm).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.L993
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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