In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 10R ( 2005-10-01), p. 7367-
Abstract:
An epitaxial heterojunction made of a p -type perovskite manganite La 0.8 Sr 0.2 MnO 3 film and an n -type strontium titanate SrTiO 3 :Nb substrate has been fabricated by the pulsed laser deposition technique. The current–voltage ( I – V ) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10 K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0×10 13 cm -2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.7367
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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