In:
Applied Physics Letters, AIP Publishing, Vol. 86, No. 2 ( 2005-01-10)
Abstract:
We report formation of persistent carrier electrons in hydride ion (H−)-incorporated 12CaO∙7Al2O3 (C12A7) by electron-beam irradiation. The electrical conductivity of H−-doped C12A7 single crystals increases with the electron-beam irradiation dose, accompanied with a green coloration attributable to a carrier electron formation. A 25 keV electron beam with a dose of ∼500μCcm−2 fully converts the conductivity in surface layers to the depth of ∼4μm. Carrier electron formation is most likely due to electron-hole pairs generated in the electron excitation volume and subsequent energy transfer to the H− ions. The estimated carrier formation yield per an incident electron is ∼30. These findings may enable a fine patterning of the conductive area without photomasks and photoresists.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2005
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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