In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4R ( 2013-04-01), p. 040206-
Abstract:
The crystallinity and surface roughness of ZnTe epilayers grown on (0001) ZnO bulk substrates by metal organic vapor phase epitaxy are investigated. X-ray diffraction, Raman spectra, photoluminescence, and atomic force microscopy analysis results prove that the crystallinity and surface roughness of ZnTe epilayers depend on epitaxial growth temperature. A high-crystal-quality (111) ZnTe heteroepitaxial layer, with near-band-edge emission at 549 nm, was obtained at a substrate temperature of 460 °C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.040206
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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