In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 23 ( 2007-12-03)
Abstract:
Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N=3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B=1.2T. This means that, in the Kondo regime, an inverse effective magnetic field of B∼1.2T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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