In:
Nano, World Scientific Pub Co Pte Ltd, Vol. 12, No. 05 ( 2017-05), p. 1750064-
Abstract:
S-doped C 3 N 4 quantum dots (SCNQDs) were synthesized successfully by a low-temperature solid-phase method. The as-synthesised SCNQDs were decorated on ZnO nanorods by a dipping method. The ZnO nanorod films were prepared through a two-stage method, including pulse electrodeposition for depositing ZnO seed layer on fluorine doping SnO 2 glass (FTO) and chemical bath for growing ZnO nanorods on the ZnO seed layer. The prepared samples were characterized via scanning electron microscope (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), UV-vis absorption spectroscopy, X-ray photoelectron spectroscopy (XPS). The photoelectrochemical performances of the prepared samples were estimated using linear sweep voltammograms, electrochemical impedance spectra (EIS), Mott–Schottky, transient photocurrent and incident photon-to-current conversion efficiency (IPCE). The results show that the light absorption edge of the prepared SCNQDs increases from 326[Formula: see text] nm (CNQDs) to 349[Formula: see text]nm after S doping. The CNQD decorated ZnO photoanode film exhibits 1.34 times as high photocurrent as bare ZnO photoanode film. Importantly, the photocurrent increased to 1.79 times than bare ZnO photoanode film by S doping at 1.0[Formula: see text] V (versus Ag/AgCl), which is attributed to a wider light absorption of SCNQDs and a better efficiency of electron transfer in the interface between SCNQDs and ZnO.
Type of Medium:
Online Resource
ISSN:
1793-2920
,
1793-7094
DOI:
10.1142/S1793292017500643
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2017
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