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  • Han, Lianhuan  (3)
  • Chemistry/Pharmacy  (3)
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  • Chemistry/Pharmacy  (3)
RVK
  • 1
    Online Resource
    Online Resource
    Wiley ; 2020
    In:  Angewandte Chemie International Edition Vol. 59, No. 47 ( 2020-11-16), p. 21129-21134
    In: Angewandte Chemie International Edition, Wiley, Vol. 59, No. 47 ( 2020-11-16), p. 21129-21134
    Abstract: Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly ( 〈 20 μm s −1 ), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were “sculpted” directly on a semiconductor wafer by SECM direct‐writing mode. The machining accuracy was controlled to the sub‐micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.
    Type of Medium: Online Resource
    ISSN: 1433-7851 , 1521-3773
    URL: Issue
    RVK:
    Language: English
    Publisher: Wiley
    Publication Date: 2020
    detail.hit.zdb_id: 2011836-3
    detail.hit.zdb_id: 123227-7
    Location Call Number Limitation Availability
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  • 2
    In: Angewandte Chemie, Wiley, Vol. 132, No. 47 ( 2020-11-16), p. 21315-21320
    Abstract: Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly ( 〈 20 μm s −1 ), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were “sculpted” directly on a semiconductor wafer by SECM direct‐writing mode. The machining accuracy was controlled to the sub‐micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.
    Type of Medium: Online Resource
    ISSN: 0044-8249 , 1521-3757
    URL: Issue
    RVK:
    RVK:
    Language: English
    Publisher: Wiley
    Publication Date: 2020
    detail.hit.zdb_id: 505868-5
    detail.hit.zdb_id: 506609-8
    detail.hit.zdb_id: 514305-6
    detail.hit.zdb_id: 505872-7
    detail.hit.zdb_id: 1479266-7
    detail.hit.zdb_id: 505867-3
    detail.hit.zdb_id: 506259-7
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  • 3
    Online Resource
    Online Resource
    The Electrochemical Society ; 2021
    In:  Journal of The Electrochemical Society Vol. 168, No. 4 ( 2021-04-01), p. 043507-
    In: Journal of The Electrochemical Society, The Electrochemical Society, Vol. 168, No. 4 ( 2021-04-01), p. 043507-
    Abstract: Free of tool wear, residual stress, and surface damage, electrochemistry plays a significant role in precision machining. We report here a semiconductor polishing technique based on electrochemically induced chemical etching, in which the concentration distribution of electrogenerated etchant between the tool electrode and the semiconductor workpiece can be precisely controlled by the pulse frequency of the potential applied to the tool electrode. A theoretical model is established, and the finite element analysis shows that the concentration difference of the electrogenerated etchant at the peak and valley of the rough surface of the semiconductor workpiece is dependent on the frequency of the potential pulse. Consequently, the diffusion distance and concentration distribution of electrogenerated etchant at the tool electrode/electrolyte interface can be controlled effectively by tuning the frequency of pulse potential. Under a mechanical motion mode, the roughness of a raw GaAs workpiece can be reduced efficiently from 700 nm to 5.1 nm. This technique is ideal for the electrochemical polishing of semiconductor wafers.
    Type of Medium: Online Resource
    ISSN: 0013-4651 , 1945-7111
    RVK:
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2021
    Location Call Number Limitation Availability
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