In:
Crystal Research and Technology, Wiley, Vol. 56, No. 9 ( 2021-09)
Abstract:
In this work, the dislocation etching pit morphology and etching kinetics on the A ‐{110} plane of sapphire crystal (α‐Al 2 O 3 ) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [30] and [302] , respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al 2 O 3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol −1 , which is developed in a manner of kinematic wave by the step moving with a constant speed.
Type of Medium:
Online Resource
ISSN:
0232-1300
,
1521-4079
DOI:
10.1002/crat.202100022
Language:
English
Publisher:
Wiley
Publication Date:
2021
detail.hit.zdb_id:
1480828-6
Permalink