In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 10A ( 1988-10-01), p. L1938-
Abstract:
This letter describes a multilayer structure which has successfully been used for recrystallization of thin polycrystalline silicon films on silicon dioxide, preventing at the same time the formation of thermal misfit dislocations in the underlying silicon substrate. A CO 2 laser beam having a round spot with a Gaussian intensity distribution was used in the zone-melting process which resulted in a simultaneous recrystallization of two levels of polysilicon. The lower silicon film is of good crystalline quality and of significantly improved flatness.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.27.L1938
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1988
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink