In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 11A ( 1988-11-01), p. L2168-
Abstract:
New MNOS retention characteristic phenomena are demonstrated. Shrunk MNOS memory devices are closely evaluated. While charge retentivity of the erased state depends only slightly on silicon nitride thickness, written-state retentivity is improved by reducing silicon nitride thickness. These new phenomena are applied to memory device design. A 1 M bit MNOS EEPROM can be designed with silicon nitride thickness 20.0 nm and programming voltage 10.7 V. These results show the MNOS memory device to be a very promising candidate for Megabit EEPROM's.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.27.L2168
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1988
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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