In:
ECS Transactions, The Electrochemical Society, Vol. 28, No. 8 ( 2010-10-08), p. 159-165
Abstract:
The growth of tungsten oxynitride thin films by metalorganic chemical vapor deposition (MOCVD) was achieved using an all nitrogen coordinated tungsten imido-amidinato precursor in the presence of oxygen as the reactive gas. In particular the influence of CVD process parameters on the structure, morphology and composition of the films was studied by scanning electron microscopy (SEM), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA) and X-ray diffraction XRD. It was possible to tune the content of the nitrogen of the films which could be an advantage in terms of functional properties of the tungsten oxide based materials.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
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