In:
Journal of Applied Physics, AIP Publishing, Vol. 84, No. 6 ( 1998-09-15), p. 3073-3077
Abstract:
Silicon carbide bipolar diodes fabricated by nitrogen implantation with a subsequent annealing at 1100 °C and passivated with a deposited oxide have been characterized. Capacitance– and current–voltage measurements have been made to analyze the quality of the junction. Admittance spectroscopy shows the presence of three peaks: two correspond to nitrogen and aluminum shallow levels; the third one has been more precisely studied by deep level transient spectroscopy. It presents an activation energy of Ev+0.49 eV and is probably due to a hole trap created by the nitrogen implantation.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1998
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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