In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. 3 ( 2023-03-01), p. 030904-
Abstract:
We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al p-type electrodes. The p-GaN contact layer is thinned to balance the Ohmic contact and DUV light transmittance, which helps the Rh/Al p-type electrodes realize high reflection as well as good electrical performance. After optimization, the Rh/Al reflective p-type electrodes present reflectance of greater than 70% and specific contact resistivity of 3.75 × 10 −4 Ω·cm 2 . Due to the improvement in the light extraction efficiency, the highest wall-plug efficiency of 278 nm DUV-LEDs is improved by 57% compared to the conventional configuration with Ni/Au as the p-type electrodes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/acbf14
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2023
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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