In:
Applied Physics Letters, AIP Publishing, Vol. 110, No. 13 ( 2017-03-27)
Abstract:
Solution-processed neodymium-substituted indium oxide (InNdO) thin-film transistors (TFTs) based on gel-like aqueous precursors were fabricated with a surface-selective deposition technique associated with ultraviolet irradiation. The Nd concentration can be easily tuned by changing the ratio of Nd2O3 to In2O3 precursors. It was found that Nd played roles of suppressing grain growth, suppressing oxygen vacancy formation, and increasing the electrical stability of TFTs. The InNdO TFT with a Nd:In ratio of 0.02:1 exhibited a mobility of as high as 15.6 cm2 V−1 s−1 with improved stability under gate-bias stress.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2017
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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