In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 8B ( 1996-08-01), p. L1069-
Abstract:
We have investigated hydrogen molecules ( H 2 ) formed in heavily doped n-type silicon by remote hydrogen atom treatment. We measure the Raman lines of H 2 as a function of the substrate temperature during hydrogen atom treatment. A broad vibrational Raman line of H 2 can be clearly observed at around 4158 cm -1 for substrate temperatures between 250 and 500° C, indicating that hydrogen exists in molecular form in crystalline silicon. The vibrational Raman line of H 2 has a maximum intensity for a substrate temperature of 400° C. An isotope shift is also detected at around 2990 cm -1 in silicon treated with deuterium atoms at 400° C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1069
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink
